STF25N80K5

STMicroelectronics
511-STF25N80K5
STF25N80K5

Tillverk:

Beskrivning:
MOSFET:er N-Ch 800V 0.19 Ohm 19.5A MDmesh K5

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 1 014

Lager:
1 014 Kan skickas omedelbart
Fabrikens ledtid:
16 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
58,41 kr 58,41 kr
29,04 kr 290,40 kr
27,28 kr 2 728,00 kr
26,29 kr 13 145,00 kr
25,19 kr 25 190,00 kr

Produktattribut Attributvärde Välj attribut
STMicroelectronics
Produktkategori: MOSFET:er
RoHS-direktivet:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
19.5 A
260 mOhms
- 30 V, 30 V
4 V
40 nC
- 55 C
+ 150 C
40 W
Enhancement
MDmesh
Tube
Märke: STMicroelectronics
Konfiguration: Single
Monteringsland: Not Available
Distributionsland: Not Available
Ursprungsland: IT
Produkttyp: MOSFETs
Serie: STF25N80K5
Fabriksförpackningskvantitet: 1000
Underkategori: Transistors
Transistortyp: 1 N-Channel
Enhetens vikt: 2 g
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Attribut som valts: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

STMicroelectronics SuperMESH High Voltage MOSFETs - Thru-Hole