STGFW40H65FB

STMicroelectronics
511-STGFW40H65FB
STGFW40H65FB

Tillverk:

Beskrivning:
IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 290

Lager:
290 Kan skickas omedelbart
Fabrikens ledtid:
14 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Partier som är större än 290 kommer att omfattas av ett krav på minimibeställning.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
37,95 kr 37,95 kr
20,90 kr 209,00 kr
14,52 kr 1 452,00 kr

Produktattribut Attributvärde Välj attribut
STMicroelectronics
Produktkategori: IGBTs
RoHS-direktivet:  
Si
TO-3PF
Through Hole
Single
650 V
2 V
- 20 V, 20 V
80 A
62.5 W
- 55 C
+ 175 C
STGFW40H65FB
Märke: STMicroelectronics
Monteringsland: Not Available
Distributionsland: Not Available
Ursprungsland: KR
Gate-sändarens läckström: 250 nA
Produkttyp: IGBT Transistors
Fabriksförpackningskvantitet: 300
Underkategori: IGBTs
Enhetens vikt: 7 g
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Attribut som valts: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.