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STPSC8TH13TI

Name: STMicroelectronics STPSC8TH13TI
Brand: STMicroelectronics
SKU: 511-STPSC8TH13TI
Price: 39.6 SEK
Availability: OutOfStock

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Mouser nr:

511-STPSC8TH13TI

Tillverk: Nr.:

STPSC8TH13TI

Tillverk:

STMicroelectronics

Beskrivning:

SiC-schottkydioder Dual 650V Pwr Schtky Silicn Carbide Diode

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Datablad:

STPSC8TH13TI Datablad (PDF)

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Fabrikens ledtid:: 19 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.

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Minst: 1 Flera: 1

Enhetspris:

-,-- kr

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Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	39,60 kr	39,60 kr
	26,62 kr	266,20 kr
	24,31 kr	12 155,00 kr

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Produktattribut	Attributvärde	Välj attribut
Tillverkare:	STMicroelectronics
Produktkategori:	SiC-schottkydioder
RoHS-direktivet:
Monteringsstil:	Through Hole
Paket/låda:	TO-220-3
Konfiguration:	Dual
If - Framström:	8 A
Vrrm - Repetativ backspänning:	650 V
Vf - Framspänning:	1.56 V
Ifsm - Stötström framåt:	420 A
Ir - Motström:	335 uA
Minsta drifttemperatur:	- 40 C
Maximal drifttemperatur:	+ 175 C
Serie:	STPSC
Förpackning:	Tube
Märke:	STMicroelectronics
Monteringsland:	Not Available
Distributionsland:	Not Available
Ursprungsland:	CN
Produkttyp:	SiC Schottky Diodes
Fabriksförpackningskvantitet:	1000
Underkategori:	Diodes & Rectifiers
Enhetens vikt:	6 g

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Datablad

STPSC8TH13TI Datablad (PDF)

PCN

TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.