SIZ998DT-T1-GE3

Vishay Semiconductors
78-SIZ998DT-T1-GE3
SIZ998DT-T1-GE3

Tillverk:

Beskrivning:
MOSFET:er 30V Vds 20V Vgs PowerPAIR 6 x 5

Datablad:
ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.
Mer information
Lär dig mer om Vishay Semiconductors SIZ998DT-T1-GE3

På lager: 6 663

Lager:
6 663 Kan skickas omedelbart
Fabrikens ledtid:
3 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:
Förpackning:
Komplett Papprulle (beställ i multiplar av 3000)

Prissättning (SEK)

Antal Enhetspris
Ext. pris
Skärtejp/MouseReel™ †
22,33 kr 22,33 kr
14,41 kr 144,10 kr
9,83 kr 983,00 kr
7,81 kr 3 905,00 kr
7,62 kr 7 620,00 kr
Komplett Papprulle (beställ i multiplar av 3000)
7,22 kr 21 660,00 kr
† 58,00 kr MouseReel™-avgiften kommer att läggas till och beräknas i din kundvagn. MouseReel™-beställningar kan inte avbeställas eller returneras. ↩

Produktattribut Attributvärde Välj attribut
Vishay
Produktkategori: MOSFET:er
RoHS-direktivet:  
REACH - SVHC:
Si
SMD/SMT
PowerPAIR-6x5-8
N-Channel
2 Channel
30 V
20 A, 60 A
4.7 mOhms, 2.2 mOhms
- 16 V, 20 V
1.1 V
18 nC, 44.3 nC
- 55 C
+ 150 C
20.2 W, 32.9 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Märke: Vishay Semiconductors
Konfiguration: Dual
Monteringsland: Not Available
Distributionsland: Not Available
Ursprungsland: TW
Falltid: 10 ns, 10 ns
Transkonduktans framåt - Min: 80 S, 165 S
Produkttyp: MOSFETs
Stigtid: 65 ns, 65 ns
Serie: SIZ
Fabriksförpackningskvantitet: 3000
Underkategori: Transistors
Transistortyp: 2 N-Channel
Typisk fördröjningstid vid avstängning: 10 ns, 17 ns
Typisk fördröjningstid vid påslagning: 15 ns, 25 ns
Enhetens vikt: 337,318 mg
Hittade produkter:
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Attribut som valts: 0

TARIC:
8541210000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

SkyFET® Power MOSFETs

Vishay / Siliconix SkyFET® Power MOSFETs integrate a MOSFET and a Schottky diode and are ideal for increasing efficiency at light loads and higher frequencies to reduce power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Other features include increased efficiency for DC-DC converter applications, reduced space by eliminating external Schottky diodes, low-side switch for synchronous rectification, and reduced power losses linked to the body diode of the MOSFET. Typical applications for Vishay / Siliconix SkyFET Power MOSFETs include point of load (PoL), synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Dual N-Channel TrenchFET® Power MOSFETs

Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs offer co-packaged MOSFETs to reduce space and increase performance over two discrete. These Dual N-Channel TrenchFET Power MOSFETs combine two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET Power MOSFETs simplify the layout, reduces parasitic inductance from PCB traces, increases efficiency, and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 

PowerPAIR® Dual-MOSFETs

Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged Vishay PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

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