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NCP51561DADWR2G

Name: onsemi NCP51561DADWR2G
Brand: onsemi
SKU: 863-NCP51561DADWR2G
Price: 34.76 SEK
Availability: InStock

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Mouser nr:

863-NCP51561DADWR2G

Tillverk: Nr.:

NCP51561DADWR2G

Tillverk:

onsemi

Beskrivning:

Galvaniserade isolerade gatedrivkretsar 5 kVrms Isolated Dual Channel 4.5/9 A Gate Driver

Datablad:

NCP51561DADWR2G Datablad

ECAD-modell:

Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Mer information

Lär dig mer om onsemi NCP51561DADWR2G

På lager: 586

Lager:: 586 Kan skickas omedelbart

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Fabrikens ledtid:: 38 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.

Lång ledtid har rapporterats för denna produkt.

Ange kvantitet:

Minst: 1 Flera: 1

Enhetspris:

-,-- kr

Ext. pris:

-,-- kr

Est. Pris:

Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	34,76 kr	34,76 kr
	26,18 kr	261,80 kr
	23,87 kr	596,75 kr
	21,78 kr	2.178,00 kr
	21,23 kr	5.307,50 kr
	19,25 kr	9.625,00 kr
Komplett Papprulle (beställ i multiplar av 1000)
	19,14 kr	19.140,00 kr
	18,59 kr	37.180,00 kr
	18,04 kr	90.200,00 kr

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Produktattribut	Attributvärde	Välj attribut
Tillverkare:	onsemi
Produktkategori:	Galvaniserade isolerade gatedrivkretsar
RoHS-direktivet:
Serie:	NCP51561
Monteringsstil:	SMD/SMT
Paket/låda:	SOIC-16
Antal kanaler:	2 Channel
Isoleringsspänning:	5 kVrms
Minsta drifttemperatur:	- 40 C
Maximal drifttemperatur:	+ 125 C
Utbredningsförsening - Max:	58 ns
Stigtid:	11 ns
Falltid:	10 ns
Förpackning:	Reel
Förpackning:	Cut Tape
Märke:	onsemi
Konfiguration:	Dual
Monteringsland:	Not Available
Distributionsland:	Not Available
Ursprungsland:	PH
Ingångsspänning – max.:	5 V
Ingångsspänning – min.:	3 V
Maximal förseningstid vid avstängning:	58 ns
Maximal förseningstid vid påslagning:	58 ns
Antal drivenheter:	2 Driver
Antal utgångar:	2 Output
Utgångsström:	4.5 A, 9 A
Utgångsspänning:	18.5 V to 30 V
Produkt:	Gate Driver
Produkttyp:	Galvanically Isolated Gate Drivers
Fabriksförpackningskvantitet:	1000
Underkategori:	PMIC - Power Management ICs
Maximal matningsspänning:	5 V
Minimal matningsspänning:	3 V

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Datablad

NCP51561DADWR2G Datablad

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8542399000
CAHTS:: 8542310000
USHTS:: 8542310030
ECCN:: EAR99

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NCP51561 5kVRMS Isolated Dual-Channel Gate Drivers

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Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.